NANOCRYSTAL ASIA INC.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
C07D HETEROCYCLIC COMPOUNDS 1161
 
  
 
C30B SINGLE-CRYSTAL GROWTH 155
 
  
 
G03F PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR 1103
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 1361
 
  
 
H05B ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR 1110

Top Patents (by citation)

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8853030 Method for production of selective growth masks using underfill dispensing and sinteringApr 22, 13Oct 07, 14[H01L, G03F, C30B]
8093408 Antidepressant oral pharmaceutical compositionsJun 21, 05Jan 10, 12[C07D]
7130534 Gas chromatograph having a radiant oven for analytical devicesApr 21, 05Oct 31, 06[H05B]

Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2014/0374,934 METHOD FOR STRENGTHENING SEMICONDUCTOR MANUFACTURING TOOLSAbandonedJul 23, 13Dec 25, 14[B29C]
2014/0353,277 METHOD FOR FABRICATING DEFECT FREE SILICON MOLD INSERTAbandonedJul 16, 13Dec 04, 14[H01L]
2014/0357,063 MANUFACTURING METHODS OF SEMICONDUCTOR SUBSTRATESAbandonedJul 16, 13Dec 04, 14[H01L]
2013/0276,696 PRODUCTION METHOD FOR FLAT SUBSTRATE WITH LOW DEFECT DENSITYAbandonedApr 22, 13Oct 24, 13[C30B]
2013/0280,893 METHOD FOR PRODUCTION OF SELECTIVE GROWTH MASKS USING IMPRINT LITHOGRAPHYAbandonedApr 22, 13Oct 24, 13[H01L]
2012/0285,371 METHOD FOR MAKING FLAT SUBSTRATE FROM INCREMENTAL-WIDTH NANORODS WITH PARTIAL COATINGAbandonedOct 07, 11Nov 15, 12[C30B]
2012/0280,243 SEMICONDUCTOR SUBSTRATE AND FABRICATING METHOD THEREOFAbandonedOct 24, 11Nov 08, 12[H01L]
2012/0167,820 METHOD FOR MAKING FLAT SUBSTRATE FROM INCREMENTAL-WIDTH NANORODSAbandonedOct 07, 11Jul 05, 12[C30B]

Top Inventors for This Owner

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