MIE FUJITSU SEMICONDUCTOR LIMITED

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 125240
 
  
 
H03K PULSE TECHNIQUE 29102
 
  
 
G11C STATIC STORES 25126
 
  
 
G06F ELECTRIC DIGITAL DATA PROCESSING 16431
 
  
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 595
 
  
 
H03F AMPLIFIERS 578
 
  
 
H03L AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES 476
 
  
 
G01R MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 3156
 
  
 
H03B GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS 261
 
  
 
C03C CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS159

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2017/0293,583 SEMICONDUCTOR INTEGRATED CIRCUIT AND DESIGN METHOD THEREOFMar 03, 17Oct 12, 17[G06F]
2017/0221,777 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF FORMING MASKDec 21, 16Aug 03, 17[H01L]
2017/0047,100 Integrated Circuit Device Body Boas Circuits and MethodsOct 28, 16Feb 16, 17[H01L, G06F, G11C]
2017/0012,044 Low Power Semiconductor Transistor Structure and Method of Fabrication ThereofSep 21, 16Jan 12, 17[H01L]
2016/0336,318 Transistor with Threshold Voltage Set Notch and Method of Fabrication ThereofJun 24, 16Nov 17, 16[H01L]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9922977 Transistor with threshold voltage set notch and method of fabrication thereofJun 24, 16Mar 20, 18[H01L]
9893148 Method for fabricating a transistor device with a tuned dopant profileOct 04, 16Feb 13, 18[H01L]
9865596 Low power semiconductor transistor structure and method of fabrication thereofSep 21, 16Jan 09, 18[H01L]
9853019 Integrated circuit device body bias circuits and methodsOct 28, 16Dec 26, 17[H03K, H01L, H02M, G06F, G05F, G11C]
9838012 Digital circuits having improved transistors, and methods thereforApr 06, 17Dec 05, 17[H03K, H01L, G11C]
9812550 Semiconductor structure with multiple transistors having various threshold voltagesJan 30, 17Nov 07, 17[H01L]
9793172 Reducing or eliminating pre-amorphization in transistor manufactureOct 20, 16Oct 17, 17[H01L]
9786703 Buried channel deeply depleted channel transistorOct 04, 16Oct 10, 17[H01L, H04N]
9773733 Semiconductor deviceMar 10, 16Sep 26, 17[H01L]
9741428 Integrated circuit devices and methodsApr 21, 16Aug 22, 17[H01L, G11C]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2017/0186,704 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING MOISTURE-RESISTANT RINGS BEING FORMED IN A PERIPHERAL REGIONAbandonedMar 15, 17Jun 29, 17[H01L]
2016/0336,056 Dram-Type Device With Low Variation Transistor Peripheral Circuits, and Related MethodsAbandonedJul 25, 16Nov 17, 16[G11C]
2016/0307,907 CMOS Structures and Processes Based on Selective ThinningAbandonedJun 03, 16Oct 20, 16[H01L]
2016/0211,346 Epitaxial Channel Transistors and Die With Diffusion Doped ChannelsAbandonedMar 28, 16Jul 21, 16[H01L]
2015/0340,460 ADVANCED TRANSISTORS WITH THRESHOLD VOLTAGE SET DOPANT STRUCTURESAbandonedJul 29, 15Nov 26, 15[H01L]
2014/0273,453 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICEAbandonedMay 23, 14Sep 18, 14[H01L]
2013/0181,298 ADVANCED TRANSISTORS WITH PUNCH THROUGH SUPPRESSIONAbandonedMar 06, 13Jul 18, 13[H01L]
7973344 Double gate JFET with reduced area consumption and fabrication method thereforExpiredApr 30, 08Jul 05, 11[H01L]
7968393 Semiconductor device, design method and structureExpiredFeb 26, 09Jun 28, 11[H01L]
7964920 Semiconductor device, design method and structureExpiredFeb 26, 09Jun 21, 11[H01L]
7943971 Junction field effect transistor (JFET) structure having top-to-bottom gate tie and method of manufactureExpiredDec 17, 08May 17, 11[H01L]
7941098 Common data line signaling and methodExpiredJul 02, 07May 10, 11[H04B]
2011/0079,861 Advanced Transistors with Threshold Voltage Set Dopant StructuresAbandonedSep 30, 10Apr 07, 11[H01L]
7915107 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloysExpiredJun 26, 09Mar 29, 11[H01L]
7847354 Semiconductor device with multiple transistors formed in a partially depleted semiconductor-on-insulator substrateExpiredFeb 06, 09Dec 07, 10[H01L]
7843721 Memory cell including an emitter follower and emitter follower sensing scheme and method of reading data therefromExpiredSep 18, 08Nov 30, 10[G11C]
7648898 Method to fabricate gate electrodesExpiredFeb 19, 08Jan 19, 10[H01L]
7645654 JFET with built in back gate in either SOI or bulk siliconExpiredNov 14, 08Jan 12, 10[H01L]
7646233 Level shifting circuit having junction field effect transistorsExpiredJul 28, 06Jan 12, 10[H03K]
7642566 Scalable process and structure of JFET for small and decreasing line widthsExpiredJun 12, 06Jan 05, 10[H01L]

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