Lattice Power (Jiangxi) Corporation

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 15347
 
  
 
C30B SINGLE-CRYSTAL GROWTH 155

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8431936 Method for fabricating a p-type semiconductor structureAug 20, 07Apr 30, 13[H01L]
8384100 InGaAIN light-emitting device and manufacturing method thereofMay 26, 06Feb 26, 13[H01L]
8361880 Semiconductor light-emitting device with metal support substrateOct 26, 06Jan 29, 13[H01L]
8053757 Gallium nitride light-emitting device with ultra-high reverse breakdown voltageAug 31, 07Nov 08, 11[H01L]
8044416 Method for fabricating high-power light-emitting diode arraysMar 25, 08Oct 25, 11[H01L]
7977663 Semiconductor light-emitting device with a highly reflective ohmic-electrodeMar 26, 08Jul 12, 11[H01L]
7943942 Semiconductor light-emitting device with double-sided passivationMar 25, 08May 17, 11[H01L]
7919784 Semiconductor light-emitting device and method for making sameSep 29, 06Apr 05, 11[H01L]
7902556 Method for fabricating high-quality semiconductor light-emitting devices on silicon substratesNov 17, 06Mar 08, 11[H01L]
7888779 Method of fabrication InGaAIN film and light-emitting device on a silicon substrateApr 14, 06Feb 15, 11[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2008/0261,403 METHOD FOR OBTAINING HIGH-QUALITY BOUNDARY FOR SEMICONDUCTOR DEVICES FABRICATED ON A PARTITIONED SUBSTRATEAbandonedJul 12, 07Oct 23, 08[H01L]

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