LATTICE POWER (JIANGXI) CORPORATION
Patent Owner
Stats
- 8 US PATENTS IN FORCE
- 0 US APPLICATIONS PENDING
- Dec 29, 2015 most recent publication
Details
- 8 Issued Patents
- 0 Issued in last 3 years
- 0 Published in last 3 years
- 266 Total Citation Count
- Aug 31, 2007 Earliest Filing
- 7 Expired/Abandoned/Withdrawn Patents
Patent Activity in the Last 10 Years
Technologies
Intl Class
Technology
Matters
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Top Patents (by citation)
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Recent Publications
- No Recent Publications to Display
Recent Patents
Patent #
Title
Filing Date
Issue Date
Intl Class
8435816 Method for fabricating InGaAlN light emitting device on a combined substrateAug 22, 08May 07, 13[H01L]
8431475 Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperatureAug 31, 07Apr 30, 13[H01L]
8426325 Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrateJul 06, 11Apr 23, 13[H01L]
8383438 Method for fabricating InGaAIN light-emitting diodes with a metal substrateAug 19, 08Feb 26, 13[H01L]
8354665 Semiconductor light-emitting devices for generating arbitrary colorAug 19, 08Jan 15, 13[H01L]
Expired/Abandoned/Withdrawn Patents
Patent #
Title
Status
Filing Date
Issue/Pub Date
Intl Class
2011/0298,005 METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILANE AS A PRECURSORAbandonedOct 12, 07Dec 08, 11[H01L]
2011/0253,972 LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILMAbandonedAug 19, 08Oct 20, 11[H01L]
2011/0147,704 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION LAYERAbandonedAug 19, 08Jun 23, 11[H01L, B82Y]
2011/0147,705 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH SILICONE PROTECTIVE LAYERAbandonedAug 19, 08Jun 23, 11[H01L, B82Y]
2011/0140,081 METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATIONAbandonedAug 19, 08Jun 16, 11[H01L]
2011/0133,158 METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERSAbandonedAug 19, 08Jun 09, 11[H01L]
2011/0133,159 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYERAbandonedAug 19, 08Jun 09, 11[H01L]
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