IQE KC, LLC

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Patent Activity in the Last 10 Years

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H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 9353

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9076812 HEMT structure with iron-doping-stop component and methods of formingJun 27, 13Jul 07, 15[H01L]
7872330 Bipolar transistor with enhanced base transportJun 24, 09Jan 18, 11[H01L]
7566948 Bipolar transistor with enhanced base transportOct 20, 04Jul 28, 09[H01L]
7345327 Bipolar transistorOct 20, 04Mar 18, 08[H01L]
7186624 Bipolar transistor with lattice matched base layerApr 14, 04Mar 06, 07[H01L]
7115466 Bipolar transistor with graded base layerJan 20, 05Oct 03, 06[H01L]
6847060 Bipolar transistor with graded base layerApr 10, 02Jan 25, 05[H01L]
6800879 Method of preparing indium phosphide heterojunction bipolar transistorsJan 08, 02Oct 05, 04[H01L]
6750480 Bipolar transistor with lattice matched base layerNov 27, 01Jun 15, 04[H01L]

Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2015/0171,075 Method and Layer Structure for Preventing Intermixing of Semiconductor LayersAbandonedNov 21, 14Jun 18, 15[H01L]
2014/0175,519 METHOD AND LAYER STRUCTURE FOR PREVENTING INTERMIXING OF SEMICONDUCTOR LAYERSAbandonedNov 08, 13Jun 26, 14[H01L]
2014/0167,058 COMPOSITIONALLY GRADED NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTORAbandonedAug 22, 13Jun 19, 14[H01L]
2014/0151,712 ENHANCEMENT-MODE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD OF MAKING SAMEAbandonedJun 07, 13Jun 05, 14[H01L]
2013/0341,635 DOUBLE ALUMINUM NITRIDE SPACERS FOR NITRIDE HIGH ELECTRON-MOBILITY TRANSISTORSAbandonedJun 07, 13Dec 26, 13[H01L]
2013/0207,078 InGaN-Based Double Heterostructure Field Effect Transistor and Method of Forming the SameAbandonedJan 18, 13Aug 15, 13[H01L]
2012/0326,211 BIPOLAR HIGH ELECTRON MOBILITY TRANSISTOR AND METHODS OF FORMING SAMEAbandonedJun 21, 12Dec 27, 12[H01L]
2012/0293,813 Methods For Monitoring Growth Of Semiconductor LayersAbandonedNov 18, 11Nov 22, 12[G01B]
2012/0175,681 Method and Layer Structure for Preventing Intermixing of Semiconductor LayersAbandonedSep 13, 11Jul 12, 12[H01L]

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