INTELLECTUAL PROPERTY VENTURES L.L.C.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 6356
 
 
 
C30B SINGLE-CRYSTAL GROWTH 254
 
 
 
H03K PULSE TECHNIQUE 2129
 
 
 
B24D TOOLS FOR GRINDING, BUFFING, OR SHARPENING 129
 
 
 
H03B GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS 162

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
6104253 Integrated circuits having cooperative ring oscillator clock circuits therein to minimize clock skewDec 11, 97Aug 15, 00[H03K, H03B]
5849413 Oriented diamond film structures on nondiamond substratesJun 06, 95Dec 15, 98[C30B]
5487945 Diamond films on nondiamond substratesNov 05, 93Jan 30, 96[B24D]
5439850 Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processingSep 08, 93Aug 08, 95[H01L]
5336903 Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structuresMay 28, 93Aug 09, 94[H01L]
5250452 Deposition of germanium thin films on silicon dioxide employing interposed polysilicon layerJun 19, 91Oct 05, 93[H01L]
5242847 Selective deposition of doped silion-germanium alloy on semiconductor substrateJul 27, 92Sep 07, 93[H01L]
5241194 Base resistance controlled thyristor with integrated single-polarity gate controlDec 14, 92Aug 31, 93[H01L]
5229668 Method and apparatus for high speed digital sampling of a data signalMar 25, 92Jul 20, 93[H03K]
5221411 Method for synthesis and processing of continuous monocrystalline diamond thin filmsApr 08, 91Jun 22, 93[C30B]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
6664143 Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewallsExpiredNov 06, 01Dec 16, 03[H01L]
5101247 Germanium silicon dioxide gate MOSFETExpiredApr 27, 90Mar 31, 92[H01L]
5021861 Integrated circuit power device with automatic removal of defective devices and method of fabricating sameExpiredMay 23, 90Jun 04, 91[H03K, H01L]

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