FORMOSA EPITAXY INCORPORATION
Patent Owner
Stats
- 23 US PATENTS IN FORCE
- 0 US APPLICATIONS PENDING
- Oct 28, 2010 most recent publication
Details
- 23 Issued Patents
- 0 Issued in last 3 years
- 0 Published in last 3 years
- 2,624 Total Citation Count
- Dec 02, 1996 Earliest Filing
- 25 Expired/Abandoned/Withdrawn Patents
Patent Activity in the Last 10 Years
Technologies
Intl Class
Technology
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Recent Publications
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Recent Patents
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Expired/Abandoned/Withdrawn Patents
Patent #
Title
Status
Filing Date
Issue/Pub Date
Intl Class
2010/0270,566 LIGHT EMITTING DEVICE WITH SELECTIVE REFLECTION FUNCTIONAbandonedAug 19, 09Oct 28, 10[H01L]
2008/0121,907 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOFAbandonedAug 08, 06May 29, 08[H01L]
2007/0187,697 Nitride based MQW light emitting diode having carrier supply layerAbandonedFeb 15, 06Aug 16, 07[H01L]
2007/0176,182 Structure for integrating LED circuit onto heat-dissipation substrateAbandonedJan 27, 06Aug 02, 07[H01L]
2007/0170,596 Flip-chip light emitting diode with high light-emitting efficiencyAbandonedJan 26, 06Jul 26, 07[H01L]
2007/0141,749 Die attachment method for LED chip and structure thereofAbandonedDec 20, 05Jun 21, 07[H01L]
2007/0090,384 Nitride based semiconductor device having multiple layer buffer structure and fabrication method thereofAbandonedOct 06, 05Apr 26, 07[H01L]
2007/0075,346 LIGHT EMITTING DIODE AND THE PACKAGE STRUCTURE THEREOFAbandonedJul 05, 06Apr 05, 07[H01L]
2007/0069,223 LIGHT EMITTING DIODE ELEMENT AND DRIVING METHOD THEREOFAbandonedJun 16, 06Mar 29, 07[H01L]
2006/0273,333 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THEREOFAbandonedAug 18, 05Dec 07, 06[H01L]
2006/0076,564 Gallium-nitride based semiconductor device buffer layer structureAbandonedOct 12, 04Apr 13, 06[H01L]
2006/0076,574 Gallium-nitride based light-emitting diodes structure with high reverse withstanding voltage and anti-ESD capabilityAbandonedNov 03, 05Apr 13, 06[H01L]
2006/0049,401 Nitride epitaxial layer structure and method of manufacturing the sameAbandonedSep 08, 04Mar 09, 06[H01L]
2006/0049,418 Epitaxial structure and fabrication method of nitride semiconductor deviceAbandonedSep 03, 04Mar 09, 06[H01L]
2006/0043,394 Gallium-nitride based light emitting diode structureAbandonedSep 01, 04Mar 02, 06[H01L]
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