EUGENE TECHNOLOGY, INC.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 1586
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 8354
 
  
 
C23F NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES 234
 
  
 
B05C APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL 144
 
  
 
F27B FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS123
 
  
 
H05H PLASMA TECHNIQUE 129

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9564329 Method and apparatus for fabricating dielectric structuresNov 25, 14Feb 07, 17[C23C, H01L]
9159608 Method for forming TiSiN thin film layer by using atomic layer depositionApr 08, 13Oct 13, 15[C23C, H01L]
8906456 Apparatus and method for high-throughput chemical vapor depositionSep 26, 13Dec 09, 14[C23C, B05C, B05D]
8349081 Gas distributor with pre-chambers arranged in planesJan 05, 06Jan 08, 13[C23C, H01L, C23F]
8114480 Method for self-limiting deposition of one or more monolayersJun 14, 07Feb 14, 12[C23C]
7981473 Transient enhanced atomic layer depositionMar 01, 04Jul 19, 11[C23C]
7410670 Process and apparatus for depositing single-component or multi-component layers and layer sequences using discontinuous injection of liquid and dissolved starting substances via a multi-channel injection unitMar 16, 06Aug 12, 08[C23C]
7183649 Methods and procedures for engineering of composite conductive films by atomic layer depositionApr 12, 02Feb 27, 07[H01L]
7164203 Methods and procedures for engineering of composite conductive by atomic layer depositionAug 30, 05Jan 16, 07[H01L]
7018940 Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processesSep 04, 03Mar 28, 06[H01L]

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