CROSSBAR, INC.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 116248
 
  
 
G11C STATIC STORES 7883
 
  
 
G06F ELECTRIC DIGITAL DATA PROCESSING 10437
 
  
 
H03K PULSE TECHNIQUE 6125
 
  
 
G06G ANALOGUE COMPUTERS 152
 
  
 
H01F MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES 183
 
  
 
H03M CODING, DECODING OR CODE CONVERSION, IN GENERAL 1110
 
  
 
H04L TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION 1284

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2017/0288,139 USING ALUMINUM AS ETCH STOP LAYERMar 24, 17Oct 05, 17[H01L]
2017/0162,783 REGULATING INTERFACE LAYER FORMATION FOR TWO-TERMINAL MEMORYDec 06, 16Jun 08, 17[H01L]
2016/0343,937 NON-STOICHIOMETRIC RESISTIVE SWITCHING MEMORY DEVICE AND FABRICATION METHODSMay 19, 16Nov 24, 16[H01L]
2015/0186,258 MEMORY SYSTEM INCLUDING PE COUNT CIRCUIT AND METHOD OF OPERATING THE SAMEDec 27, 13Jul 02, 15[G06F]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9921763 Multi-bank non-volatile memory apparatus with high-speed busJun 25, 15Mar 20, 18[G06F, G11C]
9916105 Page management for data operations utilizing a memory deviceNov 05, 15Mar 13, 18[G06F]
9847130 Selector device for two-terminal memoryJun 28, 16Dec 19, 17[H01L, G11C]
9831289 Disturb-resistant non-volatile memory device using via-fill and etchback techniqueJul 07, 14Nov 28, 17[H01L]
9805794 Enhanced erasing of two-terminal memoryMay 19, 15Oct 31, 17[G11C]
9793474 Low temperature P+ polycrystalline silicon material for non-volatile memory deviceFeb 24, 14Oct 17, 17[H01L]
9786369 Enhanced MLC programmingApr 10, 15Oct 10, 17[G11C]
9768234 Resistive memory architecture and devicesMar 09, 15Sep 19, 17[H01L, H01F]
9761635 Selector device for two-terminal memoryJun 28, 16Sep 12, 17[H01L, G11C]
9755143 On/off ratio for nonvolatile memory device and methodAug 08, 14Sep 05, 17[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2015/0200,362 TWO TERMINAL RESISTIVE SWITCHING DEVICE STRUCTURE AND METHOD OF FABRICATINGAbandonedMar 24, 15Jul 16, 15[H01L]
2015/0129,829 ONE TIME PROGRAMMABLE AND MULTI-LEVEL, TWO-TERMINAL MEMORY CELLAbandonedNov 13, 13May 14, 15[H01L]
2014/0346,427 SELECTIVE DEPOSITION OF SILVER FOR NON-VOLATILE MEMORY DEVICE FABRICATIONAbandonedAug 08, 14Nov 27, 14[H01L]
2014/0264,226 INTEGRATION OF AN AMORPHOUS SILICON RESISTIVE SWITCHING DEVICEAbandonedApr 25, 14Sep 18, 14[H01L]
2014/0264,242 DISTURB-RESISTANT NON-VOLATILE MEMORY DEVICE AND METHODAbandonedDec 17, 13Sep 18, 14[H01L]
2014/0269,001 AMORPHOUS SILICON RRAM WITH NON-LINEAR DEVICE AND OPERATIONAbandonedDec 13, 13Sep 18, 14[H01L, G11C]
2014/0225,055 RESISTIVE SWITCHING DEVICE FOR A NON-VOLATILE MEMORY DEVICEAbandonedApr 15, 14Aug 14, 14[H01L]
2014/0158,968 NOBLE METAL / NON-NOBLE METAL ELECTRODE FOR RRAM APPLICATIONSAbandonedSep 23, 13Jun 12, 14[H01L]
8513636 Vertical diodes for non-volatile memory deviceExpiredJan 23, 13Aug 20, 13[H04L, H01L]
8450710 Low temperature p+ silicon junction material for a non-volatile memory deviceExpiredMay 27, 11May 28, 13[H01L]
2012/0309,188 METHOD TO IMPROVE ADHESION FOR A SILVER FILLED OXIDE VIA FOR A NON-VOLATILE MEMORY DEVICEAbandonedMay 31, 11Dec 06, 12[H01L]
2012/0007,035 Intrinsic Programming Current Control for a RRAMAbandonedJul 12, 10Jan 12, 12[H01L]

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