ASM IP HOLDING B.V.
Patent Owner
Stats
- 225 US PATENTS IN FORCE
- 35 US APPLICATIONS PENDING
- Mar 20, 2018 most recent publication
Details
- 225 Issued Patents
- 0 Issued in last 3 years
- 0 Published in last 3 years
- 128,309 Total Citation Count
- May 10, 2000 Earliest Filing
- 16 Expired/Abandoned/Withdrawn Patents
Patent Activity in the Last 10 Years
Technologies
Intl Class
Technology
Matters
Rank in Class
Top Patents (by citation)
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Recent Publications
Publication #
Title
Filing Date
Pub Date
Intl Class
2018/0066,360 Combination CVD/ALD method, source and pulse profile modificationSep 11, 17Mar 08, 18[C23C]
2017/0342,559 METHOD FOR FORMING CARBON-CONTAINING SILICON/METAL OXIDE OR NITRIDE FILM BY ALD USING SILICON PRECURSOR AND HYDROCARBON PRECURSORApr 19, 17Nov 30, 17[C23C]
2017/0256,401 EMISSIVITY, SURFACE FINISH AND POROSITY CONTROL OF SEMICONDUCTOR REACTOR COMPONENTSMay 16, 17Sep 07, 17[C23C, C25D, H01L]
2017/0191,164 PROCESS GAS MANAGEMENT FOR AN INDUCTIVELY-COUPLED PLASMA DEPOSITION REACTORMar 22, 17Jul 06, 17[C23C, H01J]
2017/0178,939 SUBSTRATE TRANSPORT DEVICE AND SUBSTRATE PROCESSING APPARATUSDec 17, 15Jun 22, 17[H01L]
2017/0162,366 FILM FORMING APPARATUS, RECORDING MEDIUM, AND FILM FORMING METHODDec 08, 15Jun 08, 17[H01J, C23C]
Recent Patents
Patent #
Title
Filing Date
Issue Date
Intl Class
9909214 Method for depositing dielectric film in trenches by PEALDOct 15, 15Mar 06, 18[C23C, H01J, C03C, H05H, C23F, B44C]
9911676 System and method for gas-phase passivation of a semiconductor surfaceJan 03, 17Mar 06, 18[C23C, H01L]
9905420 Methods of forming silicon germanium tin films and structures and devices including the filmsDec 01, 15Feb 27, 18[H01L]
9905492 System and method for gas-phase passivation of a semiconductor surfaceJan 03, 17Feb 27, 18[C23C, H01L]
9895715 Selective deposition of metals, metal oxides, and dielectricsFeb 03, 15Feb 20, 18[C23C, B05D]
9896762 Method of depositing and etching film in one processing apparatusDec 16, 16Feb 20, 18[C23C, H01J]
Expired/Abandoned/Withdrawn Patents
Patent #
Title
Status
Filing Date
Issue/Pub Date
Intl Class
2017/0011,909 EMISSIVITY, SURFACE FINISH AND POROSITY CONTROL OF SEMICONDUCTOR REACTOR COMPONENTSAbandonedJul 06, 15Jan 12, 17[C23C, C25D, H01L]
2016/0115,590 METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTORAbandonedJan 04, 16Apr 28, 16[C23C]
2016/0020,094 PROCESS FOR FORMING SILICON-FILLED OPENINGS WITH A REDUCED OCCURRENCE OF VOIDSAbandonedNov 26, 14Jan 21, 16[H01L]
2015/0361,557 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHODAbandonedJun 17, 14Dec 17, 15[C23C]
2014/0273,531 Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURESAbandonedOct 24, 13Sep 18, 14[H01L]
2014/0116,335 UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation ApparatusAbandonedOct 31, 12May 01, 14[H01L]
2013/0337,653 SEMICONDUCTOR PROCESSING APPARATUS WITH COMPACT FREE RADICAL SOURCEAbandonedJun 14, 13Dec 19, 13[H01L]
2013/0320,429 PROCESSES AND STRUCTURES FOR DOPANT PROFILE CONTROL IN EPITAXIAL TRENCH FILLAbandonedMay 31, 12Dec 05, 13[H01L]
2013/0276,707 VERTICAL FURNACE WITH CIRCUMFERENTIALLY DISTRIBUTED GAS INLET SYSTEMAbandonedApr 23, 12Oct 24, 13[C23C]
2013/0224,964 Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bondAbandonedFeb 28, 12Aug 29, 13[H01L]
2012/0263,876 DEPOSITION OF SILICON DIOXIDE ON HYDROPHOBIC SURFACESAbandonedFeb 13, 12Oct 18, 12[C23C]
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