APLUS FLASH TECHNOLOGY, INC.

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Technologies

Intl Class Technology Matters Rank in Class
 
  
 
G11C STATIC STORES 33118
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 4358
 
  
 
G06F ELECTRIC DIGITAL DATA PROCESSING 3444
 
  
 
H05K PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS 1155

Top Patents (by citation)

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9666286 Self-timed SLC NAND pipeline and concurrent program without verificationSep 18, 15May 30, 17[G11C]
9443578 NAND array architecture for multiple simultaneous program and readDec 27, 15Sep 13, 16[G11C]
9443579 VSL-based VT-compensation and analog program scheme for NAND array without CSLAug 17, 15Sep 13, 16[G11C]
9437306 NAND array architecture for multiple simutaneous program and readDec 27, 15Sep 06, 16[G11C]
9183940 Low disturbance, power-consumption, and latency in NAND read and program-verify operationsMay 20, 14Nov 10, 15[G11C]
9177644 Low-voltage fast-write PMOS NVSRAM cellAug 12, 13Nov 03, 15[G11C]
9177645 10T NVSRAM cell and cell operationsOct 19, 13Nov 03, 15[G11C]
9177658 1T1b and 2T2b flash-based, data-oriented EEPROM designNov 18, 14Nov 03, 15[G11C]
9171627 Non-boosting program inhibit scheme in NAND designMar 15, 13Oct 27, 15[G11C]
9087595 Shielding 2-cycle half-page read and program schemes for advanced NAND flash designApr 20, 13Jul 21, 15[G11C]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
8634241 Universal timing waveforms sets to improve random access read and write speed of memoriesExpiredDec 12, 11Jan 21, 14[G11C]
8634254 Single-polycrystalline silicon electrically erasable and programmable memory device of varied gate oxide thickness, using PIP or MIM coupling capacitor for cell size reduction and simultaneous VPP and VNN for write voltage reductionExpiredMar 19, 11Jan 21, 14[G11C]
8582363 Method and apparatus for management of over-erasure in NAND-based NOR-type flash memoryExpiredJan 31, 11Nov 12, 13[G11C]
2013/0294,161 LOW-VOLTAGE FAST-WRITE NVSRAM CELLAbandonedMay 06, 13Nov 07, 13[G11C]
8559232 DRAM-like NVM memory array and sense amplifier design for high temperature and high endurance operationExpiredApr 27, 11Oct 15, 13[G11C]
8531885 NAND-based 2T2b NOR flash array with a diode connection to cell's source node for size reduction using the least number of metal layersExpiredMay 26, 11Sep 10, 13[G11C]
2013/0215,683 Three-Dimensional Flash-Based Combo Memory and Logic DesignAbandonedAug 15, 12Aug 22, 13[H01L, G11C]
8472251 Single-polycrystalline silicon electrically erasable and programmable nonvolatile memory deviceExpiredFeb 10, 09Jun 25, 13[H01L, G11C]
8462553 Cell array for highly-scalable, byte-alterable, two-transistor FLOTOX EEPROM non-volatile memoryExpiredDec 23, 10Jun 11, 13[G11C]
8455923 Embedded NOR flash memory process with NAND cell and true logic compatible low voltage deviceExpiredJun 29, 11Jun 04, 13[H01L]
8355287 Method and apparatus for operation of a NAND-like dual charge retaining transistor NOR flash memory deviceExpiredAug 23, 10Jan 15, 13[G11C]
8345481 NAND based NMOS NOR flash memory cell, a NAND based NMOS NOR flash memory array, and a method of forming a NAND based NMOS NOR flash memory arrayExpiredOct 25, 11Jan 01, 13[G11C]
8335108 Bit line gate transistor structure for a multilevel, dual-sided nonvolatile memory cell NAND flash arrayExpiredNov 14, 08Dec 18, 12[G11C]
8331150 Integrated SRAM and FLOTOX EEPROM memory deviceExpiredJan 05, 09Dec 11, 12[G11C]
8295087 Row-decoder and select gate decoder structures suitable for flashed-based EEPROM operating below +/− 10v BVDSExpiredJun 16, 09Oct 23, 12[G11C]
8289775 Apparatus and method for inhibiting excess leakage current in unselected nonvolatile memory cells in an arrayExpiredJun 22, 09Oct 16, 12[G11C]
8274829 Row-decoder and source-decoder structures suitable for erase in unit of page, sector and chip of a NOR-type flash operating below +/− 10V BVDSExpiredJun 09, 09Sep 25, 12[G11C]
8233320 High speed high density NAND-based 2T-NOR flash memory designExpiredJul 02, 10Jul 31, 12[G11C]
2012/0191,902 One-Die Flotox-Based Combo Non-Volatile MemoryAbandonedJan 24, 12Jul 26, 12[G06F, G11C]
8149622 Memory system having NAND-based NOR and NAND flashes and SRAM integrated in one chip for hybrid data, code and cache storageExpiredFeb 05, 10Apr 03, 12[G11C]

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