AMMONO SP. Z O.O.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
C30B SINGLE-CRYSTAL GROWTH 1640
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 5357

Top Patents (by citation)

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8754449 High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereofJun 10, 05Jun 17, 14[H01L]
8110848 Substrate for epitaxy and method of preparing the sameJun 16, 08Feb 07, 12[C30B]
7935550 Method of forming light-emitting device using nitride bulk single crystal layerJan 04, 08May 03, 11[H01L, C30B]
7905957 Method of obtaining bulk single crystals by seeded growthNov 28, 05Mar 15, 11[C30B]
7811380 Process for obtaining bulk mono-crystalline gallium-containing nitrideDec 11, 03Oct 12, 10[C30B]
7750355 Light emitting element structure using nitride bulk single crystal layerOct 28, 02Jul 06, 10[H01L]
7744697 Bulk monocrystalline gallium nitrideOct 14, 03Jun 29, 10[C30B]
7589358 Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the sameDec 13, 02Sep 15, 09[H01L, C30B]
7422633 Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrateJun 06, 02Sep 09, 08[C30B]
7420261 Bulk nitride mono-crystal including substrate for epitaxyOct 30, 06Sep 02, 08[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2010/0327,292 METHOD OF OBTAINING BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE, BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE, SUBSTRATES MANUFACTURED THEREOF AND DEVICES MANUFACTURED ON SUCH SUBSTRATESAbandonedJun 24, 10Dec 30, 10[H01L]
2008/0050,855 Nitride semiconductor laser device and a method for improving its performanceAbandonedOct 22, 07Feb 28, 08[H01S]
7315559 Nitride semiconductor laser device and a method for improving its performanceExpiredJun 26, 03Jan 01, 08[H01S]
2006/0138,431 Light emitting device structure having nitride bulk single crystal layerAbandonedDec 11, 02Jun 29, 06[H01L]
7057211 Nitride semiconductor laser device and manufacturing method thereofExpiredOct 28, 02Jun 06, 06[H01L]

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