AKASH SYSTEMS, INC.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 14348
 
  
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 299
 
  
 
C30B SINGLE-CRYSTAL GROWTH 254

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2016/0186,362 SUBSTRATES FOR SEMICONDUCTOR DEVICESDec 04, 13Jun 30, 16[H01L, C30B]
2015/0279,945 SEMICONDUCTOR DEVICES WITH IMPROVED RELIABILITY AND OPERATING LIFE AND METHODS OF MANUFACTUIRNG THE SAMEOct 25, 13Oct 01, 15[H01L]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9882007 Handle for semiconductor-on-diamond wafers and method of manufactureJul 02, 13Jan 30, 18[H01L]
9548257 Semiconductor device structures comprising polycrystalline CVD diamond with improved near-substrate thermal conductivityAug 29, 14Jan 17, 17[C23C, H01L]
9418833 Synthetic diamond coated compound semiconductor substratesDec 12, 12Aug 16, 16[C23C, H01L, C30B]
9359693 Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufactureFeb 28, 13Jun 07, 16[C23C, H01L, C30B]
9214407 Synthetic diamond heat spreadersNov 19, 13Dec 15, 15[H01L]
8945966 Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layerSep 10, 12Feb 03, 15[H01L, C30B]
8796843 RF and milimeter-wave high-power semiconductor deviceAug 12, 10Aug 05, 14[H01L]
8759134 Gallium-nitride-on-diamond wafers and devices, and methods of manufactureJan 24, 14Jun 24, 14[H01L]
8674405 Gallium—nitride-on-diamond wafers and devices, and methods of manufactureFeb 28, 12Mar 18, 14[H01L]
8283189 Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substratesSep 29, 09Oct 09, 12[H01L]

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